Electroformed nickel construction ensures durability and precise etching for reliable device fabrication
Supports 20 source and drain contacts per 20 mm x 15 mm substrate for high-density FET integration
Compatible with various substrates including glass, ITO, and silicon for versatile use
Available in linear and interdigitated channel geometries to suit different device requirements
Microscope images and optical masks included for accurate pattern verification
Summarized by Shop
For High Quality deposition of source-drain contacts
Produce 20 OFETs on a single substrate
Overview | Specifications | Resources
Shadow masks for deposition of source-drain contacts. Designed for use in the Evaporation Stack for High Density OFETs with our standard sized substrates of 20 mm x 15 mm. Each mask produces 20 OFETs on a sin